深圳市凯斯宇科技有限公司

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

270G)

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

190 G)

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)

195

IDM

Pulsed Drain Current Q)

1080

P_D @T_C = 25°C

Maximum Power Dissipation

375

W

Linear Derating Factor

2.5

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery ®

10

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lb"in (1.1N"m)

Symbol

Parameter

Max.

Units

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

270G)

A

I_D @ T_C = 100°C

Continuous Drain Current, V_GS @ 10V (Silicon Limited)

190 G)

I_D @ T_C = 25°C

Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)

195

IDM

Pulsed Drain Current Q)

1080

P_D @T_C = 25°C

Maximum Power Dissipation

375

W

Linear Derating Factor

2.5

W/°C

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery ®

10

V/ns

T_J

TSTG

Operating Junction and

Storage Temperature Range

-55  to + 175

°C

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

Mounting torque, 6-32 or M3 screw

10lb"in (1.1N"m)